1N5407G B0G

Taiwan Semiconductor Corporation

Product No:

1N5407G B0G

Package:

DO-201AD

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 800V 3A DO201AD

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Package Bulk
Technology Standard
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Product Status Active
Base Product Number 1N5407
Capacitance @ Vr, F 25pF @ 4V, 1MHz
Supplier Device Package DO-201AD
Current - Reverse Leakage @ Vr 5 µA @ 800 V
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 3A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A