1N8030-GA

GeneSiC Semiconductor

Product No:

1N8030-GA

Manufacturer:

GeneSiC Semiconductor

Package:

TO-257

Batch:

-

Datasheet:

Description:

DIODE SIL CARB 650V 750MA TO257

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr GeneSiC Semiconductor
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-257-3
Product Status Obsolete
Base Product Number 1N8030
Capacitance @ Vr, F 76pF @ 1V, 1MHz
Supplier Device Package TO-257
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 5 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 750mA
Operating Temperature - Junction -55°C ~ 250°C
Voltage - Forward (Vf) (Max) @ If 1.39 V @ 750 mA