1N8030-GA
GeneSiC Semiconductor
Product No:
1N8030-GA
Manufacturer:
Package:
TO-257
Batch:
-
Datasheet:
Description:
DIODE SIL CARB 650V 750MA TO257
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | GeneSiC Semiconductor |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Product Status | Obsolete |
| Base Product Number | 1N8030 |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Supplier Device Package | TO-257 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 750mA |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - Forward (Vf) (Max) @ If | 1.39 V @ 750 mA |
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