1SS403E,L3F

Toshiba Semiconductor and Storage

Product No:

1SS403E,L3F

Package:

ESC

Batch:

-

Datasheet:

-

Description:

DIODE GEN PURP 200V 100MA ESC

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Speed Small Signal =< 200mA (Io), Any Speed
Series -
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Product Status Active
Base Product Number 1SS403
Capacitance @ Vr, F 3pF @ 0V, 1MHz
Supplier Device Package ESC
Reverse Recovery Time (trr) 60 ns
Current - Reverse Leakage @ Vr 1 µA @ 200 V
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 100mA
Operating Temperature - Junction 150°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA