2SJ635-TL-E

onsemi

Product No:

2SJ635-TL-E

Manufacturer:

onsemi

Package:

TP

Batch:

-

Datasheet:

-

Description:

2SJ635 - P-CHANNEL SILICON MOSFE

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr onsemi
Series -
Package Bulk
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Obsolete
Vgs(th) (Max) @ Id 2.6V @ 1mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 60mOhm @ 6A, 10V
Power Dissipation (Max) 1W (Ta), 30W (Tc)
Supplier Device Package TP
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)