2SK2372(2)-A

Renesas Electronics America Inc

Product No:

2SK2372(2)-A

Package:

TO-3P

Batch:

-

Datasheet:

-

Description:

DISCRETE / POWER MOSFET

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Renesas Electronics America Inc
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 270mOhm @ 13A, 10V
Power Dissipation (Max) 3W (Ta), 160W (Tc)
Supplier Device Package TO-3P
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)