2SK3798(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SK3798(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

POWER MOSFET TRANSISTOR TO-220(S

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 3.5Ohm @ 2A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)