6A10GHB0G

Taiwan Semiconductor Corporation

Product No:

6A10GHB0G

Package:

R-6

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 100V 6A R-6

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Standard Recovery >500ns, > 200mA (Io)
Series Automotive, AEC-Q101
Package Bulk
Technology Standard
Mounting Type Through Hole
Package / Case R-6, Axial
Product Status Active
Base Product Number 6A10
Capacitance @ Vr, F 60pF @ 4V, 1MHz
Supplier Device Package R-6
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 6A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 6 A