BSM180D12P3C007

Rohm Semiconductor

Product No:

BSM180D12P3C007

Manufacturer:

Rohm Semiconductor

Package:

Module

Batch:

-

Datasheet:

-

Description:

SIC POWER MODULE

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Rohm Semiconductor
Series -
Package Bulk
Technology Silicon Carbide (SiC)
FET Feature -
Power - Max 880W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 5.6V @ 50mA
Base Product Number BSM180
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs -
Supplier Device Package Module
Gate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)