Diodes Incorporated
Product No:
DMWS120H100SM4
Manufacturer:
Package:
TO-247-4
Batch:
-
Description:
SIC MOSFET BVDSS: >1000V TO247-4
Quantity:
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Mfr | Diodes Incorporated |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | +19V, -8V |
Technology | SiC (Silicon Carbide Junction Transistor) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 5mA |
Base Product Number | DMWS120 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 15V |
Power Dissipation (Max) | 208W (Tc) |
Supplier Device Package | TO-247-4 |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
Drain to Source Voltage (Vdss) | 1200 V |
Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 1000 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Current - Continuous Drain (Id) @ 25°C | 37.2A (Tc) |