F1T7G A1G

Taiwan Semiconductor Corporation

Product No:

F1T7G A1G

Package:

TS-1

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 1A TS-1

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tape & Box (TB)
Technology Standard
Mounting Type Through Hole
Package / Case T-18, Axial
Product Status Active
Base Product Number F1T7
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Supplier Device Package TS-1
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A