FDB12N50TM
Fairchild Semiconductor
Product No:
FDB12N50TM
Manufacturer:
Package:
D2PAK (TO-263)
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Fairchild Semiconductor |
| Series | UniFET™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| Power Dissipation (Max) | 165W (Tc) |
| Supplier Device Package | D2PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1315 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
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