G110N06K

Goford Semiconductor

Product No:

G110N06K

Manufacturer:

Goford Semiconductor

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6.4mOhm @ 4A, 10V
Power Dissipation (Max) 160W (Tc)
Supplier Device Package TO-252
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 5538 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)