Goford Semiconductor
Product No:
G110N06K
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
-
Description:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Quantity:
Please send RFQ , we will respond immediately.
Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 4A, 10V |
Power Dissipation (Max) | 160W (Tc) |
Supplier Device Package | TO-252 |
Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |