G12P10KE
Goford Semiconductor
Product No:
G12P10KE
Manufacturer:
Package:
TO-252
Batch:
-
Datasheet:
Description:
P-100V,ESD,-12A,RD(MAX)<200M@-10
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | G |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
| Power Dissipation (Max) | 57W (Tc) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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