Goford Semiconductor
Product No:
G12P10TE
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
P-100V,-12A,RD(MAX)<200M@-10V,VT
Quantity:
Please send RFQ , we will respond immediately.
Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | P-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 10V |
Power Dissipation (Max) | 40W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Drain to Source Voltage (Vdss) | 100 V |
Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |