Goford Semiconductor
Product No:
G630J
Manufacturer:
Package:
TO-251
Batch:
-
Description:
N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Quantity:
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Mfr | Goford Semiconductor |
Series | G |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 280mOhm @ 4.5A, 10V |
Power Dissipation (Max) | 83W (Tc) |
Supplier Device Package | TO-251 |
Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
Drain to Source Voltage (Vdss) | 200 V |
Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |