GB10SLT12-220

GeneSiC Semiconductor

Product No:

GB10SLT12-220

Manufacturer:

GeneSiC Semiconductor

Package:

TO-220-2

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 1.2KV 10A TO220-2

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr GeneSiC Semiconductor
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Obsolete
Base Product Number GB10SLT12
Capacitance @ Vr, F 520pF @ 1V, 1MHz
Supplier Device Package TO-220-2
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A