GC11N65F

Goford Semiconductor

Product No:

GC11N65F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

-

Datasheet:

-

Description:

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Power Dissipation (Max) 31.3W
Supplier Device Package TO-220F
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C 11A