GC20N65Q

Goford Semiconductor

Product No:

GC20N65Q

Manufacturer:

Goford Semiconductor

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Power Dissipation (Max) 151W (Tc)
Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1724 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)