GT013N04TI

Goford Semiconductor

Product No:

GT013N04TI

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N40V, 220A,RD<2.5M@10V,VTH2.0V~5

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V
Power Dissipation (Max) 90W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 3986 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 220A (Tc)