Goford Semiconductor
Product No:
GT013N04TI
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
N40V, 220A,RD<2.5M@10V,VTH2.0V~5
Quantity:
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Mfr | Goford Semiconductor |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 30A, 10V |
Power Dissipation (Max) | 90W (Tc) |
Supplier Device Package | TO-220 |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 3986 pF @ 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |