GT105N10F

Goford Semiconductor

Product No:

GT105N10F

Manufacturer:

Goford Semiconductor

Package:

TO-220F

Batch:

-

Datasheet:

-

Description:

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 10.5mOhm @ 11A, 10V
Power Dissipation (Max) 20.8W (Tc)
Supplier Device Package TO-220F
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)