GT105N10F
Goford Semiconductor
Product No:
GT105N10F
Manufacturer:
Package:
TO-220F
Batch:
-
Datasheet:
-
Description:
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 11A, 10V |
| Power Dissipation (Max) | 20.8W (Tc) |
| Supplier Device Package | TO-220F |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Follow Us
Quick Links
