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GT20J341,S4X(S

Toshiba Semiconductor and Storage

Product No:

GT20J341,S4X(S

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

DISCRETE IGBT TRANSISTOR TO-220S

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 45 W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Test Condition 300V, 20A, 33Ohm, 15V
Switching Energy 500µJ (on), 400µJ (off)
Td (on/off) @ 25°C 60ns/240ns
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220SIS
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Reverse Recovery Time (trr) 90 ns
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 80 A
Voltage - Collector Emitter Breakdown (Max) 600 V