GT30J121(Q)

Toshiba Semiconductor and Storage

Product No:

GT30J121(Q)

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

IGBT 600V 30A 170W TO3PN

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 170 W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Test Condition 300V, 30A, 24Ohm, 15V
Switching Energy 1mJ (on), 800µJ (off)
Base Product Number GT30J121
Td (on/off) @ 25°C 90ns/300ns
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 60 A
Voltage - Collector Emitter Breakdown (Max) 600 V