Toshiba Semiconductor and Storage
Product No:
GT40WR21,Q
Manufacturer:
Package:
TO-3P(N)
Batch:
-
Datasheet:
-
Description:
DISCRETE IGBT TRANSISTOR TO-3PN(
Quantity:
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Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tray |
IGBT Type | - |
Input Type | Standard |
Power - Max | 375 W |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Product Status | Active |
Test Condition | - |
Switching Energy | - |
Td (on/off) @ 25°C | - |
Operating Temperature | 175°C (TJ) |
Supplier Device Package | TO-3P(N) |
Vce(on) (Max) @ Vge, Ic | 5.9V @ 15V, 40A |
Current - Collector (Ic) (Max) | 40 A |
Current - Collector Pulsed (Icm) | 80 A |
Voltage - Collector Emitter Breakdown (Max) | 1350 V |