GT40WR21,Q

Toshiba Semiconductor and Storage

Product No:

GT40WR21,Q

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

DISCRETE IGBT TRANSISTOR TO-3PN(

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tray
IGBT Type -
Input Type Standard
Power - Max 375 W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Test Condition -
Switching Energy -
Td (on/off) @ 25°C -
Operating Temperature 175°C (TJ)
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 5.9V @ 15V, 40A
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Voltage - Collector Emitter Breakdown (Max) 1350 V