HER606G B0G

Taiwan Semiconductor Corporation

Product No:

HER606G B0G

Package:

R-6

Batch:

-

Datasheet:

Description:

DIODE GEN PURP 600V 6A R-6

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Bulk
Technology Standard
Mounting Type Through Hole
Package / Case R-6, Axial
Product Status Active
Base Product Number HER606
Capacitance @ Vr, F 65pF @ 4V, 1MHz
Supplier Device Package R-6
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 6A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A