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IDH04G65C5XKSA2

Infineon Technologies

Product No:

IDH04G65C5XKSA2

Manufacturer:

Infineon Technologies

Package:

PG-TO220-2-1

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 4A TO220-2-1

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series CoolSiC™+
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number IDH04G65
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2-1
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 70 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A