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IDH04G65C6XKSA1

Infineon Technologies

Product No:

IDH04G65C6XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-2

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 12A TO220-2

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number IDH04G65
Capacitance @ Vr, F 205pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 4 A