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IMBG120R090M1HXTMA1

Infineon Technologies

Product No:

IMBG120R090M1HXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 26A TO263

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolSiC™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +18V, -15V
Technology SiCFET (Silicon Carbide)
FET Feature Standard
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Base Product Number IMBG120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 8.5A, 18V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO263-7-12
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 763 pF @ 800 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)