Infineon Technologies
Product No:
IMBG120R090M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Batch:
-
Datasheet:
-
Description:
SICFET N-CH 1.2KV 26A TO263
Quantity:
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Mfr | Infineon Technologies |
Series | CoolSiC™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | +18V, -15V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | Standard |
Mounting Type | Surface Mount |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 3.7mA |
Base Product Number | IMBG120 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 125mOhm @ 8.5A, 18V |
Power Dissipation (Max) | 136W (Tc) |
Supplier Device Package | PG-TO263-7-12 |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 18 V |
Drain to Source Voltage (Vdss) | 1200 V |
Input Capacitance (Ciss) (Max) @ Vds | 763 pF @ 800 V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |