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IMZA65R048M1HXKSA1

Infineon Technologies

Product No:

IMZA65R048M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-4-3

Batch:

-

Datasheet:

-

Description:

MOSFET 650V NCH SIC TRENCH

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +23V, -5V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 6mA
Base Product Number IMZA65
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 64mOhm @ 20.1A, 18V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package PG-TO247-4-3
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 18 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)