Infineon Technologies
Product No:
IMZA65R048M1HXKSA1
Manufacturer:
Package:
PG-TO247-4-3
Batch:
-
Datasheet:
-
Description:
MOSFET 650V NCH SIC TRENCH
Quantity:
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Mfr | Infineon Technologies |
Series | CoolSiC™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | +23V, -5V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 6mA |
Base Product Number | IMZA65 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
Power Dissipation (Max) | 125W (Tc) |
Supplier Device Package | PG-TO247-4-3 |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |