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IPB043N10NF2SATMA1

Infineon Technologies

Product No:

IPB043N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

AUTOMOTIVE MOSFET

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 93µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.35mOhm @ 80A, 10V
Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 135A (Tc)