Home / Single FETs, MOSFETs / IPB65R110CFDAATMA1

IPB65R110CFDAATMA1

Infineon Technologies

Product No:

IPB65R110CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 31.2A D2PAK

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Base Product Number IPB65R110
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Power Dissipation (Max) 277.8W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)