IPD60R800CEATMA1

Infineon Technologies

Product No:

IPD60R800CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

Description:

MOSFET N-CH 600V 5.6A TO252-3

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Obsolete
Vgs(th) (Max) @ Id 3.5V @ 170µA
Base Product Number IPD60R
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V
Power Dissipation (Max) 48W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 5.6A (Tc)