Home / FET, MOSFET Arrays / IPG20N10S4L35AATMA1

IPG20N10S4L35AATMA1

Infineon Technologies

Product No:

IPG20N10S4L35AATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-10

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 100V 20A 8TDSON

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 43W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 16µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A