IPI041N12N3GAKSA1

Infineon Technologies

Product No:

IPI041N12N3GAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 120V 120A TO262-3

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Base Product Number IPI041
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.1mOhm @ 100A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)