IPI26CNE8N G

Infineon Technologies

Product No:

IPI26CNE8N G

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Batch:

-

Datasheet:

Description:

MOSFET N-CH 85V 35A TO262-3

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 39µA
Base Product Number IPI26C
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Power Dissipation (Max) 71W (Tc)
Supplier Device Package PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 85 V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)