IPS80R1K4P7

Infineon Technologies

Product No:

IPS80R1K4P7

Manufacturer:

Infineon Technologies

Package:

PG-TO251

Batch:

-

Datasheet:

-

Description:

IPS80R1K4 - 800V COOLMOS N-CHANN

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS P7™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 700µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max) 32W (Tc)
Supplier Device Package PG-TO251
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Tj)