IPW50R190CE

Infineon Technologies

Product No:

IPW50R190CE

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 510µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 6.2A, 13V
Power Dissipation (Max) 152W (Tc)
Supplier Device Package PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs 47.2 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 1137 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 13V
Current - Continuous Drain (Id) @ 25°C 24.8A (Tc)