IQE006NE2LM5CGSCATMA1
Infineon Technologies
Product No:
IQE006NE2LM5CGSCATMA1
Manufacturer:
Package:
PG-WHTFN-9-1
Batch:
-
Datasheet:
-
Description:
OPTIMOS LOWVOLTAGE POWER MOSFET
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Infineon Technologies |
| Series | OptiMOS™ 5 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 9-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 0.58mOhm @ 20A, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 89W (Tc) |
| Supplier Device Package | PG-WHTFN-9-1 |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5453 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Ta), 310A (Tc) |
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