IRFD123

Harris Corporation

Product No:

IRFD123

Manufacturer:

Harris Corporation

Package:

4-HVMDIP

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 1.3A 4DIP

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Harris Corporation
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Supplier Device Package 4-HVMDIP
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)