IXTD3N60P-2J

IXYS

Product No:

IXTD3N60P-2J

Manufacturer:

IXYS

Package:

Die

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 3A DIE

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr IXYS
Series PolarHV™
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case Die
Product Status Obsolete
Vgs(th) (Max) @ Id 5.5V @ 50µA
Base Product Number IXTD3N
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.9Ohm @ 1.5A, 10V
Power Dissipation (Max) 70W (Tc)
Supplier Device Package Die
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 411 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)