IXTQ200N10T

IXYS

Product No:

IXTQ200N10T

Manufacturer:

IXYS

Package:

TO-3P

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 200A TO3P

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr IXYS
Series Trench
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Base Product Number IXTQ200
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V
Power Dissipation (Max) 550W (Tc)
Supplier Device Package TO-3P
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)