MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Gain 12.5dB
Series -
Package Tape & Reel (TR)
Power - Max 800mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Product Status Active
Transistor Type NPN
Base Product Number MT3S111
Operating Temperature 150°C (TJ)
Frequency - Transition 10GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 6V