PDTD123ET,215

NXP Semiconductors

Product No:

PDTD123ET,215

Manufacturer:

NXP Semiconductors

Package:

TO-236AB

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL BIPOLAR TRANSISTOR,

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr NXP Semiconductors
Series PDTD123E
Package Bulk
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Transistor Type NPN - Pre-Biased
Resistor - Base (R1) 2.2 kOhms
Supplier Device Package TO-236AB
Resistor - Emitter Base (R2) 2.2 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max) 500 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V