PMXB350UPEZ
NXP Semiconductors
Product No:
PMXB350UPEZ
Manufacturer:
Package:
DFN1010D-3
Batch:
-
Datasheet:
Description:
NEXPERIA PMXB350UPE - 20 V, P-CH
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | NXP Semiconductors |
| Series | - |
| Package | Bulk |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 447mOhm @ 1.2A, 4.5V |
| Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) |
| Supplier Device Package | DFN1010D-3 |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 116 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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