PSMN018-100ESFQ

NXP Semiconductors

Product No:

PSMN018-100ESFQ

Manufacturer:

NXP Semiconductors

Package:

I2PAK

Batch:

-

Datasheet:

Description:

NEXPERIA PSMN018 - NEXTPOWER 100

Quantity:

In Stock : Please Inquiry

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Product Information

Parameter Info
Mfr NXP Semiconductors
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V
Power Dissipation (Max) 111W (Ta)
Supplier Device Package I2PAK
Gate Charge (Qg) (Max) @ Vgs 21.4 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1482 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Current - Continuous Drain (Id) @ 25°C 53A (Ta)