PSMN070-200P,127-NXP
NXP USA Inc.
Product No:
PSMN070-200P,127-NXP
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 3
Quantity:
In Stock : Please Inquiry
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
| Mfr | NXP USA Inc. |
| Series | TrenchMOS™ |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 17A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4570 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Follow Us
Quick Links
