PSMN1R1-30PL,127
NXP Semiconductors
Product No:
PSMN1R1-30PL,127
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
Description:
NEXPERIA PSMN1R1-30PL - 120A, 30
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | NXP Semiconductors |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 25A, 10V |
| Power Dissipation (Max) | 338W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 243 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14850 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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