RF1S640
Harris Corporation
Product No:
RF1S640
Manufacturer:
Package:
I2PAK (TO-262)
Batch:
-
Datasheet:
-
Description:
18A, 200V, 0.180 OHM, N-CHANNEL
Quantity:
In Stock : Please Inquiry
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Product Information
Parameter Info
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | I2PAK (TO-262) |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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