RN1106MFV(TL3,T)

Toshiba Semiconductor and Storage

Product No:

RN1106MFV(TL3,T)

Package:

VESM

Batch:

-

Datasheet:

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Base Product Number RN1106
Resistor - Base (R1) 4.7 kOhms
Supplier Device Package VESM
Resistor - Emitter Base (R2) 47 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V