RN1911FE,LF(CT

Toshiba Semiconductor and Storage

Product No:

RN1911FE,LF(CT

Package:

ES6

Batch:

-

Datasheet:

-

Description:

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Base Product Number RN1911
Resistor - Base (R1) 10kOhms
Frequency - Transition 250MHz
Supplier Device Package ES6
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V