RN2106MFV,L3XHF(CT

Toshiba Semiconductor and Storage

Product No:

RN2106MFV,L3XHF(CT

Package:

VESM

Batch:

-

Datasheet:

-

Description:

AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER

Quantity:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

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Product Information

Parameter Info
Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Active
Transistor Type PNP - Pre-Biased
Base Product Number RN2106
Resistor - Base (R1) 4.7 kOhms
Frequency - Transition 250 MHz
Supplier Device Package VESM
Resistor - Emitter Base (R2) 47 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V